| 1. | Chiung-Wei Lin, Hong-Li Lin(2023). Argon Assisted Crystallization of Silicon Film with Hydrogen Dilution. ISPlasma2023/IC-PLANTS2023（頁 300）. Japan.
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| 2. | Chiung-Wei Lin, Jin-Wei Huang, Jia-Chang Ho(2020). Low Temperature Hf-silicate Prepared with Various Thermal Budgets. ISPlasma2020/IC-PLANTS2020（頁 250）. Japan.
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| 3. | Chiung-Wei Lin, Cheng-Hung Shen, Bing-Ying Zhong(2019). Improving p-type Micro-oxidized ZnN Film by Efficient Thermal Treatment. Int. Proc. ISPlasma（頁 18P1-35）. Japan.
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| 4. | Chiung-Wei Lin(2018). Preparing p-type ZnO by Micro-oxidation of PVD-ZnN. Int. Proc. ISPlasma2018（頁 05P13）. Japan.
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| 5. | Chiung-Wei Lin, Wei-Chieh Chung, Jing-Wei Huang(2017). NiO thin-film transistor with tetragonal HfO2 gate insulator. Int. Proc. DPS 2017（頁 41）. R.O.C.
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| 6. | Chiung-Wei Lin(2017). Low temperature tetragonal hafnium oxide films. Int. Proc. TACT（頁 C-P-0156）. R.O.C.
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| 7. | Chiung-Wei Lin, Wei-Ming Su(2017). Recovering Photocurrent by a Conducting Window Layer. Int. Proc. EDMS（頁 PD-2）. R.O.C.
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| 8. | Chiung-Wei Lin, Wei-Chieh Chung, Zhao-De Zhang, Ming-Chih Hsu(2017). P-channel transparent thin-film transistor using PVD-NiO layer. Int. Proc. ISPlasma,（頁 04P33）. Japan.
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| 9. | Chiung-Wei Lin, Jia-Wei Wang(2016). Fabrication of Less Reflective Nanowhisker on Textured Substrates. Int. Proc. MNC 2016（頁 10P-7-36）. Japan.
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| 10. | Chiung-Wei Lin, Shu-Jheng Lin(2016). Effect of Oxygen Flow on the Electrical Properties of Aluminum Zinc Oxide Transistor. Int. Proc. EDMS（頁 PA-5）. R.O.C.
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| 11. | Chiung-Wei Lin, Po-Chang Liu(2016). The Influence of Nitrogen Source on p-type ZnO Film. Int. Proc. ISPlasma, Nagoya（頁 07P17）. Japan.
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| 12. | Chiung-Wei Lin, Jia-Wei Wang, Wei-Jei Chiou(2015). Formation of Less Reflective Nanowhisker on Textured Composite Dielectric. Int. Proc TACT, 2015（頁 B-P-113）. R.O.C.
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| 13. | Chiung-Wei Lin, Bo-Sheng Zheng, Jin-Wei Huang(2015). Formation of hybrid hafnium oxide using silicon source. Int. Proc ISPlasma（頁 D3-p-03）. Japan.
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| 14. | Chiung-Wei Lin, Jia-Chi Chang, June Wei, Yeong-Shyang Lee(2015). Plasma Crystallization of Silicon Films. Int. Proc. EDMS, 2015（頁 244）. R.O.C.
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| 15. | C. W. Lin, S. K. Hong(2014). Passivation of Nitrogen on Zinc Oxide Thin Film Transistor. Int. Proc. IEDMS, 2014. R.O.C.
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| 16. | C. W. Lin, Y. L. Chen(2014). Micro-Hydrogenation of Nanometric Amorphous Silicon Film. Int. Proc. VASSCAA, 2014（頁 PSS-009）. R.O.C.
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| 17. | Chiung-Wei Lin, Yue-Pu Song, Shih-Chieh Chang(2014). Rapid thermal oxidation of zinc nitride film. Int. Proc SSDM, 2014（頁 C-6-3）. Japan.
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| 18. | C. W. Lin, Y. C. Chiang(2014). Tetragonal Hafnium Oxide Film Prepared by Low Temperature Oxidation. ISPlasma 2014（頁 05pP06）. Japan.
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| 19. | C. W. Lin, Y. T. Tsai(2013). Improved Carrier Extraction of Solar Cell Using Transparent Current Spreading Layer. Int. Proc TACT（頁 C-P-517016）. R.O.C.
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| 20. | C. W. Lin, P. C. Ho, S. J. Chang, W. W. Chen(2013). Nitridation of Zinc Oxide Film by Pulse Mode Rapid Thermal Annealing. Int. Proc SSDM（頁 PS-8-10）. Japan.
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| 21. | Chiung-Wei Lin, Yi-Liang Chen(2013). Improving a-Si/c-Si Heterojunction Using Micro-Hydrogenation. Int. Proc. ISPlasma（頁 P2023A）. Japan.
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| 22. | Chiung-Wei Lin, W. C. Chen(2013). Hydrogenation of Silicon Oxide Film by Diluted Plasma. IEDMS 2013（頁 1-69）. R.O.C.
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| 23. | C. W. Lin, W. W. Chen(2013). Two Stages Oxidation of Sputtering Deposited Hafnium. Int. Proc ISSP（頁 1-17）. Japan.
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| 24. | Chiung-Wei Lin, Po-Chi Ho, Bo-Sheng Zheng(2012). Effect of In-situ Doped Oxygen on the Electrical Properties of Sputtering Deposited Zinc Oxide Films. Int. Proc. EDMS 2012（頁 CP-21）. Japan.
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| 25. | Chiung-Wei Lin, Shih-Hao Yang, Cheng-Yen Li(2012). Ionic Nucleated Crystallized Silicon Thin-Film Transistor Fabricated at 130 oC. Int. Proc. ThinFilms2012（頁 ODF-2214）. Singapore.
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| 26. | Chiung-Wei Lin, Cheng-Chieh Juan(2012). Less Reflective Sub-Wavelength Structure Formed on Textured Surface Using Nanosphere Mask. Int. Proc. ISPlasma（頁 P1063C）. Japan.
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| 27. | Chiung-Wei Lin, Yi-Liang Chen, Yeong-Shyang Lee(2011). Fabrication of ZnO/Si Heterojunction Structure. International Photonics Conference 2011 (IPC2011)（頁 PI-FR-23）. R.O.C.
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| 28. | Chiung-Wei Lin, Wei-Jyun Chen, Po-Chi Ho(2011). Low Thermal Budget Polycrystalline Silicon Thin Film Transistors. Int. Proc. EDMS 2011（頁 P-A-2）. R.O.C.
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| 29. | Chiung-Wei Lin, Yi-Liang Chen(2011). New transparent oxide semiconductor/silicon double heterojunction solar cell. Int. Proc. TACT 2011（頁 A-058）. R.O.C.
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| 30. | Chiung-Wei Lin, Yao-Chan Tsai, Yi-Liang Chen(2011). Improved Microcrystalline Silicon and Gate Insulator Interface with a Pad/Buffer Structure. Int. Proc. TACT 2011（頁 C-115）. R.O.C.
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| 31. | Chiung-Wei Lin, Yi-Liang Chen(2011). Hydrogen and Argon Mixtures Plasma Treatment for Improving Intrinsic Layer for Heterojunction Solar Cells. Int. Proc ISSP（頁 8）. Japan.
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| 32. | Chiung-Wei Lin, Shih-Hao Yang, Wen-Wei Chen, Shi-Jay Chang, Han-Sheng Chang, Po-Chie Ho, Yeong-Shyang Lee(2011). Energetic Nucleation for Low Temperature Crystallized Silicon Film. Int. Proc ISSP（頁 PI P-2）. Japan.
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| 33. | C. W. Lin, M. S. Yang, Y. S. Lee(2011). Plasma Nitridation of Hydrogenated Silicon Nitride Film. Int. Proc ISPlasma（頁 P4-027A）. Japan.
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| 34. | C. W. Lin, Y. L. Chen(2011). Reducing the Mismatch between Zinc Oxide and Silicon by Atomic Plasma Treatment. Int. Proc AVS-IPW（頁 E008）. R.O.C.
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| 35. | Chiung-Wei Lin, Cheng-Yen Li(2011). Fast Deposition of Low Temperature Crystallized Silicon Films by Hybrid Nucleation Process. Int. Proc. DPS 2011（頁 2-4）. Japan.
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| 36. | C. W. Lin, P. C. Ho, C. F. Lee(2010). The Correlation between Gate/Drain Overlap and Instability of uc-Si/a-Si Thin-Film Transistor. Int. Proc OPT（頁 E008）. R.O.C.
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| 37. | C. W. Lin, Y. L. Chen, W. M. Su(2010). The Role Transparent Conducting Oxide Film Plays on Reducing Parasitic Series Resistance of Silicon Solar Cells. Int. Proc IEDMS（頁 P-A-2）. United States of America.
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| 38. | Chiung-Wei Lin, Yi-Liang Chen, Shu-Jheng Lin, Chi-Neng Mo(2009). The Fabrication of Thin-Film Transistors by Using Room Temperature Sputtering Deposited Aluminum-doped Zinc Oxide Film. 2009 International Display and Manufacturing Conference(IDMC)（頁 Wed-P1-09）. R.O.C.
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| 39. | Chiung-Wei Lin, Yao-Chang Tsai, Yi-Liang Chen, Chi-Neng Mo(2009). The Effect of Helium Gas on Microcrystalline Silicon Thin Film Transistors. 2009 International Display and Manufacturing Conference (IDMC)（頁 1-17）. R.O.C.
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| 40. | Chiung-Wei Lin, Yi-Liang Chen, Wei-Ming Su(2008). Radio-Frequency Sputter Deposited Current-Recovering Layer for Solar Cells. Int. Proc IEDMS（頁 28-29）. R.O.C.
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| 41. | C. W. Lin, Y.L. Chen, C.C. Chang, Y.S. Lee(2007). Ion Controlled Nucleation for Silicon Crystallization. Int. Proc IEDMS（頁 PD-023）. R.O.C.
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| 42. | Y.S. Lee, C. W. Lin, C.C. Chang, C.Y. Hou, K.F. Huang, Y.H. Peng, C.H. Chen, J.K. Chang(2007). Deposition of Porous-Free Microcrystalline Silicon Film for TFT Application in Large-Size AMLCDs. Int. Proc. IDW, 2007（頁 AMDp-35）. Japan.
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| 43. | Yeong-Shyang Lee, Chih-Hsien Chen, Chiung-Wei Lin, Ya-Hui Peng, Han-Tang Chou, Chan-Ching Chang(2007). Influence of Gate Dielectric Interface Treatment on the Performance of Amorphous Silicon Thin-Film Transistors for AMLCDs. Int. Proc. IDMC, 2007（頁 1-3）. Japan.
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| 44. | Chiung-Wei Lin, Chien-Feng Lee, Yeong-Shyang Lee, Young-Hui Yeh(2006). High-Reliability Microcrystalline Silicon Thin Film Transistors. 2006 International Electron Devices and Materials Symposia（頁 PD003）. R.O.C.
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| 45. | Chiung-Wei Lin, Yi-Liang Chen(2006). Metal Plate-Assisted Crystallization for Amorphous Silicon Films. 2006 International Electron Devices and Materials Symposia（頁 PD042）. R.O.C.
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| 46. | Yeong-Shyang Lee, Jun-Kai Chang, Chiung-Wei Lin, Chien-Chien Tsai, Kuo-Lung Fang, Hun-Tu Lin(2006). Effects of Stress Mismatch on the Electrical Characteristics of Amorphous Silicon TFTs for Active-Matrix LCDs. IMID/IDMC 2006. Japan.
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| 47. | Yeong-Shyang LeeU, Feng-Yuan Gan, Chiung-Wei Lin, Ching-Chieh Shih, Tsung-Yi Hsu, Jun-Kai Chang(2006). The Effect of Surface Plasma Treatment for n+ on Photocurrent Reduction in a-Si:H TFTs for AMLCDs. 2006 Information Display Workshop（頁 17）. R.O.C.
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| 48. | Chiung-Wei Lin, Chein-Fu Teng, Yi-Liang Chen(2005). Effect of In-Grain Porous Silicon Structure on Photovoltaic Device. 2005 international symposium on point defect and nonstoichiometry. R.O.C.
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| 49. | Chiung-Wei Lin, Yi-Liang Chen, Sheng-Chi Lee(2005). Highly Uniform Poly-Si Film Obtained by Energy-Assisted Agent. 2005 international symposium on point defect and nonstoichiometry（頁 2-74）. R.O.C.
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| 50. | Chiung-Wei Lin, Pao-An Chang(2005). Large Grain Crystallization of Germanium Doped Silicon Film by Infrared Rapid Thermal Annealing. 2005 international symposium on point defect and nonstoichiometry（頁 2-40）. R.O.C.
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| 51. | Chiung-Wei Lin, C.C.Chang, Chih-Chao Chang, Y.S.Lee, Y.H.Yeh(2005). High drivability μc-Si TFT device with a compound channel layer structure. 2005 international symposium on point defect and nonstoichiometry（頁 2-3）. R.O.C.
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| 52. | Chiung-Wei Lin, Sheng-Chi Lee, Yi-Liang Chen, De-Hua Deng(2005). A Metal Mediated Crystallization of Amorphous Silicon Film by Rapid Thermal Annealing. 2005 international symposium on point defect and nonstoichiometry（頁 2-57）. R.O.C.
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| 53. | C. W. Lin, C.K. Kang, S. C. Lee, Y.S. Lee, C.Y. Chang(2005). Polycrystalline Silicon Film formed on Plastic Substrate by Rapid Thermal Crystallization Technology. Int. Proc. IDMC（頁 Wed-P3-09）. R.O.C.
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| 54. | C. W. Lin, C.K. Kang, C.F. Deng, S. C. Lee(2004). Excimer Laser Crystallized Polycrystalline Silicon on Plastic Substrate. Int. Proc. ICA, 2004（頁 O-065）. United States of America.
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| 55. | C. W. Lin, S. C. Lee, C.K. Kang(2004). The Study on the Crystallization of Semiconductor Film by Rapid Thermal Annealing Process. Int. Proc. ICA, 2004,（頁 O-064）. United States of America.
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